Method for manufacturing a semiconductor component contactable o

Details Method for manufacturing a semiconductor component contactable o Method for manufacturing a semiconductor component contactable o

1988-05-27

1990-09-25

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 437906, H01L 2120, H01L 21329

Patent

active

049593285

ABSTRACT:
A method for manufacturing semiconductor components contactable on both sides, in particular IMPATT diodes. The active silicon layers of the IMPATT diode are grown onto a silicon substrate. The first silicon layer grown onto the silicon substrate has a high boron/germanium doping level and acts as an etch atop layer when the substrate is removed. The boron/germanium doping of the first silicon layer compensates for the mechanical stress in the silicon layer generated by the boron doping.

REFERENCES:
Rhee et al. "Integral Heat-Sink IMPATT Diodes Fabricated Using p+ Etch Stop," Proc. IEEE vol. 61, No. 3, pp. 385-386 Mar. 1973.
Johann-Friedrich Luy et al., Si-MBE Made 90 GHz Double Drift IMPATT Diodes, IEEE Trans. Electron Dev., vol. ED-34, No. 5 (May 1987).
B. Bayraktaroglu et al, "A GaAs Distributed IMPATT Diode Amplifier", IEEE Electron Letters, vol. EDL-5, No. 11, Nov. 1984, pp. 466-467.

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