Method for manufacturing a semiconductor component

Details Method for manufacturing a semiconductor component Method for manufacturing a semiconductor component

2007-07-17

2007-07-17

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S523000, C257SE21523

Reexamination Certificate

active

11264194

ABSTRACT:
A method for manufacturing a semiconductor component using a sacrificial masking structure. A semiconductor device is formed from a semiconductor substrate and a layer of dielectric material is formed over the semiconductor substrate and the semiconductor device. The layer of dielectric material may be formed directly on the semiconductor substrate or spaced apart from the semiconductor substrate by an interlayer. Posts or protrusions having sidewalls are formed from the layer of dielectric material. An electrically insulating material that is preferably different from the layer of dielectric material is formed adjacent the sidewalls of the posts. The electrically insulating material is planarized and the posts are removed to form openings that may expose a portion of the semiconductor device or a portion of the interlayer material. An electrically conductive material is formed in the openings.

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