Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2007-11-29
2010-12-07
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C257SE21647
Reexamination Certificate
active
07846808
ABSTRACT:
A method for manufacturing a semiconductor device that reduces the overall number of masking processes while also preventing short-circuiting between electrodes. The method can include sequentially forming a first insulating film, a lower metal layer, a second insulating material, an upper metal layer, and a third insulating material over a semiconductor substrate; forming a third insulating film and an upper electrode by performing a first etching process using a mask to pattern the third insulating material and the upper metal layer; and then forming a second insulating film and a lower electrode by performing a second etching process using the mask to pattern the second insulating material and the lower metal layer.
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Hwang Sang-Il
Jang Jeong-Yei
Coleman W. David
Dongbu Hi-Tek Co., Ltd.
Sherr & Vaughn, PLLC
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