Method for manufacturing a semiconductor arrangement by introduc

Details Method for manufacturing a semiconductor arrangement by introduc Method for manufacturing a semiconductor arrangement by introduc

1996-10-18

1998-06-16

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

148DIG174, 437228, 437904, H01L 21225

Patent

active

057669732

ABSTRACT:
In a semiconductor arrangement and a method for manufacturing a semiconductor arrangement, varying diffusion rates are attained by introducing crystal disorder structures into a silicon crystal. The semiconductor structure includes a semiconductor wafer which has a first layer and a second layer, which form a p-n junction. Because the diffusion rates vary, the gradient of the dopant concentration of the second layer in the edge area is greater (merely) than in the middle area. As a result, a breakdown of the p-n junction in the edge area is reached at higher voltages than in the middle area.

REFERENCES:
patent: 4738936 (1988-04-01), Rice
patent: 4740477 (1988-04-01), Einthoven et al.
patent: 4775643 (1988-10-01), Wetteroth

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