Method for manufacturing a semiconductor acceleration sensor dev

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Making plural separate devices

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438 33, 438 50, 438 52, 438456, 438458, H01L 21304

Patent

active

056680333

ABSTRACT:
On a silicon wafer there is formed a movable gate MOS transistor (sensing element: functional element). A bonding frame consisting of a silicon thin film is patterned around an element formation region on the surface of the silicon wafer. On a cap forming silicon wafer there is projectively provided a leg portion on the bottom surface of which a bonding layer consisting of a gold film is formed. The cap forming silicon wafer is disposed on the silicon wafer, whereupon heating with respect thereto is performed at a temperature equal to higher than a gold/silicon eutectic temperature to thereby make bondage between the bonding frame of the silicon wafer and the bonding layer of the cap forming silicon wafer. Thereafter, the both wafers are diced in chip units.

REFERENCES:
patent: 5006487 (1991-04-01), Stokes
patent: 5216490 (1993-06-01), Greiff et al.
patent: 5310450 (1994-05-01), Offenberg et al.
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5329110 (1994-07-01), Shimabukuro et al.

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