Coating processes – Electrical product produced – Condenser or capacitor
Patent
1979-12-03
1981-05-19
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
156643, 156647, 156653, 357 55, 427 91, 427 93, 427 94, 430314, 430318, 430329, H01L 2128
Patent
active
042685370
ABSTRACT:
An apertured mask is formed on a major surface of a semiconductor substrate, and a groove is generated in the semiconductor in an area exposed by the aperture. A layer of electrode material is then formed on the groove surface, the layer extending beyond the groove and onto the mask. The mask is then stripped, and those portions of the electrode material extending beyond the groove are removed.
REFERENCES:
patent: 3975221 (1976-08-01), Rodgers
patent: 3975925 (1976-08-01), Schwabe
patent: 4003126 (1977-01-01), Holmes et al.
patent: 4065783 (1977-12-01), Ouyang
patent: 4084175 (1978-04-01), Ouyang
patent: 4102714 (1978-07-01), DeBar et al.
patent: 4105475 (1978-08-01), Jenne
patent: 4116720 (1978-09-01), Vinson
patent: 4145703 (1979-03-01), Blanchard
patent: 4156289 (1979-05-01), Hoffman
patent: 4173765 (1979-11-01), Heald et al.
patent: 4194283 (1980-03-01), Hoffman
patent: 4206005 (1980-06-01), Yeh et al.
Chang et al., "Fabrication of V-MOS or U-MOS . . . " IBM TDB, vol. 22, No. 7, pp. 2768-2771, Dec. 1979.
Cohen Donald S.
Glick Kenneth R.
Morris Birgit E.
RCA Corporation
Smith John D.
LandOfFree
Method for manufacturing a self-aligned contact in a grooved sem does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a self-aligned contact in a grooved sem, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a self-aligned contact in a grooved sem will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1489729