Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-06-12
1999-11-02
Utech, Benjamin
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438694, 438706, 438720, 257306, H01L 21302
Patent
active
059769815
ABSTRACT:
The present invention is a method to manufacture a reverse crown capacitor. The method includes forming a triple layer silicon oxide/silicon nitride/silicon oxide over a substrate. A first node contact is defined in the triple layer. Spacers of a first node contact are formed. Then, a contact hole in the first node contact is formed to connect to the substrate. A polysilicon layer is deposited to from the plug of the contact hole. A chemical mechanical polishing (CMP) process is performed to remove the silicon nitride layer. Afterwards, a silicon oxide is formed over the substrate. A second node contact is defined and a polysilicon layer is formed on the second node contact to form the bottom plate of a capacitor. Finally, a dielectric film is formed over the bottom plate and a top plate is formed over the dielectric film.
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patent: 5652165 (1997-07-01), Lu et al.
patent: 5688713 (1997-11-01), Linliu et al.
patent: 5700731 (1997-12-01), Lin et al.
patent: 5879985 (1999-03-01), Gambino et al.
patent: 5895250 (1999-04-01), Wu
Chen Kin-Chan
Utech Benjamin
Vanguard International Semiconductor Corporation
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