Method for manufacturing a resistively switching memory cell...

Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component

Reexamination Certificate

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Details

C257S296000, C257SE21524, C438S095000, C438S103000, C438S267000

Reexamination Certificate

active

11280864

ABSTRACT:
The invention relates to a method for manufacturing at least one phase change memory cell. The method at least fabricating at least one first lamellar spacer of conductive material, which is electrically coupled to the PCM material of the memory cell; fabricating at least one second lamellar spacer on top of the first lamellar spacer, wherein the second lamellar spacer crosses the first lamellar spacer in the area of the PCM material; partially removing the first lamellar spacer, wherein the second lamellar spacer serves as a hardmask for partially removing the first lamellar spacer, so that the first lamellar spacer forms at least one electrode contacting an area of PCM material.

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patent: 5667632 (1997-09-01), Burton et al.
patent: 6514788 (2003-02-01), Quinn
patent: 6589714 (2003-07-01), Maimon et al.
patent: 6930913 (2005-08-01), Pellizzer et al.
patent: 7122824 (2006-10-01), Khouri et al.
patent: 2003/0122156 (2003-07-01), Maimon
patent: 2005/0191804 (2005-09-01), Lai et al.
patent: 10-2004-014-487 (2005-11-01), None

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