Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Reexamination Certificate
2008-01-29
2008-01-29
Rose, Kiesha L. (Department: 2809)
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
C257S296000, C257SE21524, C438S095000, C438S103000, C438S267000
Reexamination Certificate
active
07323357
ABSTRACT:
The invention relates to a method for manufacturing at least one phase change memory cell. The method at least fabricating at least one first lamellar spacer of conductive material, which is electrically coupled to the PCM material of the memory cell; fabricating at least one second lamellar spacer on top of the first lamellar spacer, wherein the second lamellar spacer crosses the first lamellar spacer in the area of the PCM material; partially removing the first lamellar spacer, wherein the second lamellar spacer serves as a hardmask for partially removing the first lamellar spacer, so that the first lamellar spacer forms at least one electrode contacting an area of PCM material.
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Qimonda AG
Rose Kiesha L.
Slater & Matsil L.L.P.
Tillie Chakila D
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