Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1985-04-17
1987-02-17
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29578, 29580, 29576W, 148 15, 148DIG82, 148DIG85, 357 41, 357 49, 357 56, 156649, 156647, H01L 21308, H01L 2978
Patent
active
046428801
ABSTRACT:
A method for manufacturing a semiconductor device comprises a first step of forming a field insulation layer on a p-type semiconductor substrate and a second step of forming an n.sup.+ -type region and n-type region in an element area surrounded by the field insulation layer. In particular, the second step includes a step of forming, in the element area, a recess having an inclined portion and flat bottom portion, a step of forming an SiO.sub.2 film of a uniform thickness on the inclined portion and flat bottom portion, and a step of ion-implanting an n-type impurity into the substrate through the SiO.sub.2 and effecting an annealing process.
REFERENCES:
patent: 3514844 (1970-06-01), Bower et al.
patent: 4453306 (1984-06-01), Lynch et al.
patent: 4455193 (1984-06-01), Jeuch et al.
patent: 4486943 (1984-12-01), Ryden et al.
patent: 4492008 (1985-01-01), Anantha et al.
Mizutani Yoshihisa
Yokogawa Syunzi
Hearn Brian E.
Hey David A.
Kabushiki Kaisha Toshiba
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