Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-08-23
2011-08-23
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S482000, C438S488000, C438S491000, C257SE21379
Reexamination Certificate
active
08003423
ABSTRACT:
A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.
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Lee Don-Hee
Lee Heon-Min
Lee Kwy-Ro
Yun Jung-Heum
Birch & Stewart Kolasch & Birch, LLP
Fourson George
LG Electronics Inc.
Parker John M
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