Method for manufacturing a planar, self-aligned emitter-base com

Details Method for manufacturing a planar, self-aligned emitter-base com Method for manufacturing a planar, self-aligned emitter-base com

1989-06-30

1990-02-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

357 34, 148DIG11, 437133, 437228, H01L 21265

Patent

active

049046128

ABSTRACT:
A method for the manufacture of a planar, self-aligned emitter-base complex, whereby a semiconductor layer structure standard for hetero-bipolar transistors is first grown on a substrate, the base regions are subsequently etching through a mask technique and are provided with the base metallization and with a first dielectric layer and insulation implantations and spacers for electrical insulation of the base are manufactured, and, following thereupon, the emitter region is provided with the emitter metallization and with a third dielectric layer.

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