Method for manufacturing a piezoelectric resonator

Details Method for manufacturing a piezoelectric resonator Method for manufacturing a piezoelectric resonator

2007-07-10

2007-07-10

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S594000, C029S830000, C029S831000, C029S832000, C029S846000, C029S847000, C310S324000

Reexamination Certificate

active

11094622

ABSTRACT:
A piezoelectric thin film resonator having a stabilized temperature characteristic of resonant frequency, a method for manufacturing the same, and a communication apparatus using the piezoelectric thin film resonator are provided. The piezoelectric thin film resonator is provided with a substrate having an opening, first and second insulation films which are provided on one surface of the substrate while covering the opening and which primarily include SiO2and Al2O3, respectively, Al2O3having oxygen defect and being in an amorphous state, and a piezoelectric thin film which is provided on the second insulation film and is sandwiched between electrodes and which primarily includes ZnO.

REFERENCES:
patent: 4456850 (1984-06-01), Inoue et al.
patent: 4719383 (1988-01-01), Wang et al.
patent: 5504388 (1996-04-01), Kimura et al.
patent: 5692279 (1997-12-01), Mang et al.
patent: 6045626 (2000-04-01), Yano et al.
patent: 6515402 (2003-02-01), Klee et al.
patent: 00124437 (2000-11-01), None
patent: 58-137317 (1983-08-01), None
patent: 03-046504 (1991-02-01), None
patent: 04-354411 (1992-12-01), None
patent: 11-116387 (1999-04-01), None
patent: 2000-69594 (2000-03-01), None
patent: 2000-196404 (2000-07-01), None
patent: 2000-244030 (2000-09-01), None
patent: 2000-278078 (2000-10-01), None
patent: 2001-274650 (2001-10-01), None
patent: 2001-279438 (2001-10-01), None
patent: 2001-313535 (2001-11-01), None
patent: 2001-326553 (2001-11-01), None
patent: 2002-043646 (2002-02-01), None
patent: 2004-221622 (2004-08-01), None
Official Communication issued in corresponding Japanese Patent Application No. 2002-338036, dated Sep. 5, 2006.
Official Communication issued in corresponding Japanese Patent Application No. 2002-338037, dated Sep. 5, 2006.

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