Method for manufacturing a piezoelectric device

Details Method for manufacturing a piezoelectric device Method for manufacturing a piezoelectric device

2007-04-03

2007-04-03

Tugbang, A. Dexter (Department: 3729)

Metal working

Piezoelectric device making

C029S025420, C029S846000, C029S890100, C310S328000

Reexamination Certificate

active

11001651

ABSTRACT:
A method is provided for effectively manufacturing a piezoelectric device equipped with a piezoelectric film with a crystal orientation that is aligned in a desired direction. An interlayer that is bi-axially oriented is formed on a surface of a substrate by conducting ion beam assisted laser ablation in a disposition in which a center axis of an ablation plume to be irradiated is angled at approximately 55 degrees to a direction normal to the substrate. A lower electrode is formed on the interlayer. A piezoelectric film is formed on the lower electrode. An upper electrode is formed on the piezoelectric film. The lower electrode and the piezoelectric film are formed by epitaxial growth.

REFERENCES:
patent: 5449659 (1995-09-01), Garrison et al.
patent: 5631463 (1997-05-01), Kawasaki et al.
patent: 6203144 (2001-03-01), Zhang
patent: 6494567 (2002-12-01), Murai
patent: 06-145977 (1994-05-01), None

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