Method for manufacturing a nonvolatile semiconductor memory devi

Details Method for manufacturing a nonvolatile semiconductor memory devi Method for manufacturing a nonvolatile semiconductor memory devi

1991-07-03

1993-05-04

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 52, 437978, 437983, H01L 21265, H01L 2170

Patent

active

052081745

ABSTRACT:
According to a method for manufacturing a nonvolatile semiconductor memory device, first, a CVD oxidation film is formed in a side wall portion of a floating gate formed on a semiconductor substrate. Then, a thermal oxidation film is formed between said floating gate and said CVD oxidation film by a thermal oxidation method. Additionally, before forming said CVD oxidation film, a thermal oxidation film may be formed in the side portion of said floating gate.

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patent: 4675978 (1987-06-01), Swartz
patent: 4774201 (1988-09-01), Woo et al.
patent: 4847667 (1989-07-01), Mori
patent: 4972371 (1990-11-01), Komori et al.
patent: 4982250 (1991-01-01), Manos, II et al.
Wolf et al: "Silicon Processing for the VLSI Era" Lathze Press, Calif., 1986, pp. 183-185.

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