Method for manufacturing a non-volatile memory cell

Details Method for manufacturing a non-volatile memory cell Method for manufacturing a non-volatile memory cell

1995-09-08

1997-03-11

Tsai, Jey

Fishing, trapping, and vermin destroying

437 52, 437203, H01L 21265

Patent

active

056100914

ABSTRACT:
A method for manufacturing a non-volatile memory cell which can improve the reliability and electrical operation characteristics of a memory cell by making a recess structure of a silicon substrate of a channel region in order to increase capacitance coupling ratio between a control gate and a floating gate is disclosed.

REFERENCES:
patent: 5376572 (1994-12-01), Yang et al.

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