Method for manufacturing a micromechanical chip and a...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...

Reexamination Certificate

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Details

C438S048000, C438S667000, C257SE21499

Reexamination Certificate

active

07989263

ABSTRACT:
In a method for manufacturing a micromechanical chip, a sacrificial layer and an epitaxy layer are initially applied to a semiconductor substrate to produce a layer stack. An opening is subsequently introduced into the epitaxy layer from the front side of the layer stack. In order to electrically insulate the subsequent filling of the opening using a conductive contact layer from the material of the epitaxy layer, the walls of the opening are provided with an insulating layer. For removing the sacrificial layer and thus for producing the chip, separation trenches are subsequently etched through the epitaxy layer to the sacrificial layer also from the front side of the layer stack, which separation trenches also delimit the lateral extension of the chip.

REFERENCES:
patent: 6635509 (2003-10-01), Ouellet
patent: 6743654 (2004-06-01), Coffa et al.
patent: 6841453 (2005-01-01), Mastromatteo
patent: 7572660 (2009-08-01), Benzel et al.
patent: 102 05 026 (2003-05-01), None
patent: 103 59 217 (2005-07-01), None
patent: 10 2006 018 027 (2007-10-01), None

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