Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Assembly of plural semiconductive substrates each possessing...
Reexamination Certificate
2011-08-02
2011-08-02
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Assembly of plural semiconductive substrates each possessing...
C438S048000, C438S667000, C257SE21499
Reexamination Certificate
active
07989263
ABSTRACT:
In a method for manufacturing a micromechanical chip, a sacrificial layer and an epitaxy layer are initially applied to a semiconductor substrate to produce a layer stack. An opening is subsequently introduced into the epitaxy layer from the front side of the layer stack. In order to electrically insulate the subsequent filling of the opening using a conductive contact layer from the material of the epitaxy layer, the walls of the opening are provided with an insulating layer. For removing the sacrificial layer and thus for producing the chip, separation trenches are subsequently etched through the epitaxy layer to the sacrificial layer also from the front side of the layer stack, which separation trenches also delimit the lateral extension of the chip.
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Kramer Torsten
Leinenbach Christina
Schelling Christoph
Booth Richard A.
Kenyon & Kenyon LLP
Robert & Bosch GmbH
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