Semiconductor device manufacturing: process – Forming schottky junction – Combined with formation of ohmic contact to semiconductor...
Reexamination Certificate
2011-04-12
2011-04-12
Smith, Matthew S (Department: 2895)
Semiconductor device manufacturing: process
Forming schottky junction
Combined with formation of ohmic contact to semiconductor...
C438S534000, C438S570000, C438S572000, C438S573000, C438S574000, C438S575000, C438S576000, C438S577000, C438S578000, C438S579000, C438S580000, C438S581000, C438S582000, C438S583000
Reexamination Certificate
active
07923362
ABSTRACT:
A method for manufacturing a metal-semiconductor contact in semiconductor Components is disclosed. There is a relatively high risk of contamination in the course of metal depositions in prior-art methods. In the disclosed method, the actual metal -semiconductor or Schottky contact is produced only after the application of a protective layer system, as a result of which it is possible to use any metals, particularly platinum, without the risk of contamination.
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Dietz Franz
Dudek Volker
Florian Tobias
Graf Michael
Lee Jae
Muncy Geissler Olds & Lowe, PLLC
Smith Matthew S
TELEFUNKEN Semiconductors GmbH & Co. KG
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