Method for manufacturing a magnetoresistive-effect device

Details Method for manufacturing a magnetoresistive-effect device Method for manufacturing a magnetoresistive-effect device

2008-10-27

2010-06-08

Klimowicz, William J (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C204S192150, C204S192200, C204S298250, C427S128000, C427S129000

Reexamination Certificate

active

07733613

ABSTRACT:
A magnetic disk apparatus having a highly sensitive reproducing head and a method for manufacturing the magnetic disk apparatus are disclosed. A spin-value-type multilayer film composed of an antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic layer and a free magnetic layer is used as a magnoresistive-effect device for the reproducing head. An antiferromagnetic reaction layer is formed between the antiferromagnetic layer and the ferromagnetic layer. The antiferromagnetic reaction layer is formed of a metallic compound containing oxygen.

REFERENCES:
patent: 6306266 (2001-10-01), Metin et al.
patent: 6331773 (2001-12-01), Engel
patent: 6413380 (2002-07-01), Pinarbasi
patent: 6428657 (2002-08-01), Pinarbasi
patent: 6482329 (2002-11-01), Takahashi et al.
patent: 6500676 (2002-12-01), Ramberg
patent: 6597547 (2003-07-01), Kawawake et al.
patent: 6671138 (2003-12-01), Noma et al.
patent: 6700753 (2004-03-01), Singleton et al.
patent: 6735061 (2004-05-01), Pinarbasi
patent: 7201827 (2007-04-01), Horng et al.
patent: 7211447 (2007-05-01), Horng et al.
patent: 7312958 (2007-12-01), Aono
patent: 7463458 (2008-12-01), Aono
patent: 2002/0012207 (2002-01-01), Singleton et al.
patent: 2002/0029463 (2002-03-01), Amano et al.
patent: 2002/0034055 (2002-03-01), Seyama et al.
patent: 2002/0044399 (2002-04-01), Noma et al.
patent: 2002/0048127 (2002-04-01), Fukuzawa et al.
patent: 2002/0159198 (2002-10-01), Pinarbasi
patent: 2003/0167625 (2003-09-01), Li et al.
patent: 2003/0206381 (2003-11-01), Hou et al.
patent: 2004/0206619 (2004-10-01), Pinarbasi
patent: 2005/0115823 (2005-06-01), Davis
patent: 0959146 (1999-11-01), None
patent: 04-358310 (1992-12-01), None
patent: 05-095208 (1993-04-01), None
patent: 06-236527 (1994-08-01), None
patent: 06-342827 (1994-12-01), None
patent: 10-183347 (1998-07-01), None
patent: 10-188234 (1998-07-01), None
patent: 2000-137906 (2000-05-01), None
patent: 2000-268330 (2000-09-01), None
patent: 2000-348935 (2000-12-01), None
patent: 2001-207257 (2001-07-01), None
patent: 2001-283413 (2001-12-01), None
patent: 2002-026055 (2002-01-01), None
patent: 2002-076473 (2002-03-01), None
patent: 2002-76474 (2002-03-01), None
patent: 2002-92829 (2002-03-01), None
patent: 2002-124718 (2002-04-01), None
patent: 2002-198584 (2002-07-01), None
patent: 2002-223052 (2002-08-01), None
patent: 2003-115511 (2003-04-01), None
patent: 2003-142535 (2003-05-01), None
patent: 2003-183838 (2003-07-01), None
patent: 2003-203951 (2003-07-01), None
patent: 2004-281947 (2004-10-01), None
patent: 2005260226 (2005-09-01), None
patent: 2003029756 (2003-04-01), None
R.F.C. Farrow et al., “Enhanced blocking termperature in NiO spin valves: Role of cubic spinel ferrite between pinned layer and NiO,” Aug. 2000, Applied Physics Letters, vol. 77, No. 8, pp. 1191-1193.
J.C.S. Kools et al. “Magnetic Properties of Specular Spin-Valves Containing Nano-Oxide Layers,” Jul. 2001, IEEE Transactions on Magnetics, vol. 37, No. 4, pp. 1783-1785.

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