Method for manufacturing a magnetic memory device and...

Details Method for manufacturing a magnetic memory device and... Method for manufacturing a magnetic memory device and...

2011-03-15

2011-03-15

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S622000, C257SE21665

Reexamination Certificate

active

07906346

ABSTRACT:
A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.

REFERENCES:
patent: 2005/0070033 (2005-03-01), Kajiyama
patent: 2006/0088947 (2006-04-01), Lien et al.
patent: 2000-277612 (2000-10-01), None

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