Method for manufacturing a luminescent diode having a high frequ

Details Method for manufacturing a luminescent diode having a high frequ Method for manufacturing a luminescent diode having a high frequ

1982-06-22

1985-09-10

Ozaki, George T.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148171, 148172, 29569L, H01L 21208

Patent

active

045404518

ABSTRACT:
A luminescent diode is comprised of n- and p-conductive layer components in which a graded bandgap is present and between which a pn-junction is present. The p-conductive layer component is produced by means of an additional zinc additive during an epitaxy processing utilized for manufacturing the device. The luminescent diode of the invention has improved efficiency and a higher modulation capability cutoff frequency.

REFERENCES:
patent: 3537029 (1970-10-01), Kressel et al.
patent: 3689330 (1972-09-01), Dosen et al.
patent: 4008485 (1977-02-01), Miyoshi et al.
patent: 4268327 (1981-05-01), Uragaki et al.
"Leistungs-Infrarotdiode aus Gallium-Aluminium-Aresnid", Siemens Research & Development Reports, vol. 9, No. 6 (1980), by Leibenzeder et al., pp. 339-346.
Applied Physics Letters, vol. 19, No. 4, Aug. 15, 1971, entitled "Efficient Electroluminescence from Zinc-Diffused Ga.sub.1-x Al.sub.x As Diodes at 25.degree. C." by Dierschke et al., pp. 98-100.
IEEE Transactions on Electron Devices, vol. ED-21, No. 11, Nov. 1974, titled "Frequency Response of Ga.sub.1-x Al.sub.x As Light-Emitting Diodes" by Namizaki et al., pp. 688-691.

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