Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Patent
1998-12-17
2000-12-05
Tran, Andrew
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
438158, 438159, 438720, H01L 2100, H01L 21302
Patent
active
061565830
ABSTRACT:
A method of manufacturing an LCD requires only 4 masking while preventing undercutting of a semiconductor layer and includes the steps of etching a passivation layer, an a-Si layer and a gate insulating layer simultaneously by using CF.sub.4 /He gas. The flow ratio of the He gas to CF.sub.4 gas is preferably about 15% to about 35%.
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Lebentritt Michael S.
LG Philips LCD Co., Ltd.
Tran Andrew
LandOfFree
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