Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2007-10-09
2007-10-09
Tran, Minh-Loan (Department: 2826)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S039000, C438S047000
Reexamination Certificate
active
10720063
ABSTRACT:
A method for manufacturing a light-emitting structure of a light-emitting device (LED) is disclosed. The white colored LED includes a resonant cavity structure, producing and mixing lights which may mix into a white colored light in the resonant cavity structure, so that the white colored LED may be more accurately controlled in its generated white colored light, which efficiently reduces deficiency, generates natural white colored light and aids in luminous efficiency promotion. In addition to the resonant cavity structure, the light-emitting structure also includes a contact layer, an n-type metal electrode, and a p-type metal electrode.
REFERENCES:
patent: 2002/0117672 (2002-08-01), Chu et al.
patent: 2004/0238832 (2004-12-01), Takahashi et al.
Hon Schang-Jing
Huang Jenn-Bin
Super Nova Optoelectronics Corp.
Tran Minh-Loan
Troxell Law Office PLLC
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