Method for manufacturing a light-emitting device with a...

Details Method for manufacturing a light-emitting device with a... Method for manufacturing a light-emitting device with a...

2007-04-25

2010-06-15

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257SE33027

Reexamination Certificate

active

07736926

ABSTRACT:
The invention provides a light-emitting device, where the active region thereof may be escaped from being damaged by the plasma process. The device is first formed with a semiconductor layer on the semiconductor substrate, next provided with an etching mask. Using the mask, the semiconductor layer on the substrate is dry-etched to form a periodic structure with grooves and mesas. The active regions are buried within the grooves by the OMVPE method.

REFERENCES:
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patent: 2004-55797 (2004-02-01), None
Notification of Reasons of Rejection.

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