Method for manufacturing a laterally limited, single-crystal reg

Fishing – trapping – and vermin destroying

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

437 90, 437 31, H01L 2120

Patent

active

053267184

ABSTRACT:
A method for the manufacture of a laterally limited single crystal region that is suitable for use as an active part of a transistor.

REFERENCES:
patent: 4529455 (1985-07-01), Bean et al.
patent: 4530149 (1985-07-01), Jastrzebski et al.
patent: 4786615 (1988-11-01), Liaw et al.
patent: 4824794 (1989-04-01), Tabata et al.
patent: 4832837 (1990-01-01), Kudo
patent: 4975381 (1990-12-01), Taka et al.
patent: 4996581 (1991-02-01), Hamasaki
patent: 5024957 (1991-06-01), Harame et al.
patent: 5028557 (1991-07-01), Tsui et al.
patent: 5126285 (1992-06-01), Kasa et al.
patent: 5147809 (1992-09-01), Won et al.
patent: 5198375 (1993-03-01), Hayden et al.
patent: 5204276 (1993-04-01), Nakajima et al.
F. Sato, et al., International Electron Devices Meeting, 1990, San Francisco, Calif.; Dec. 9, 1990, pp. 607-610.
Peter J. Schubert, et al., "Vertical Bipolar Transistors Fabricated in Local Silicon on Insulator Films Prepared Using Confined Lateral Selective Epitaxial Growth (CLSEG)", IEEE Transactions on Electron Devices, vol. 37, No. 11, Nov. 1990, pp. 2336-2342.
S. M. Sze, VLSI Technology, 2d Ed., McGraw-Hill, 1988, p. 79.
H. Goto Springer Series in Electronics and Photonics, "Ultra-Fast Silicon Bipolar Technology", vol. 27, pp. 61-77.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing a laterally limited, single-crystal reg does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a laterally limited, single-crystal reg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a laterally limited, single-crystal reg will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-795811

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.