Fishing – trapping – and vermin destroying
Patent
1990-12-26
1992-05-26
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 22, 437911, H01L 21265, H01L 2120, H01L 21208
Patent
active
051167735
ABSTRACT:
The present invention provides a method for manufacturing a field effect transistor which overcomes problems occurring in the manufacture of InP material junction field effect transistors. Because the electron saturation velocity is higher than that of silicon or GaAs it is desirable to have a gate length shorter than the mask length as well as to have the source, drain, and gate metals evaporated by the self-aligned method. The present invention provides a method of achieving gate lengths of 1 .mu.m or shorter without requiring an expensive electron beam apparatus or X-ray lithography apparatus.
REFERENCES:
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4700462 (1987-10-01), Beaubien et al.
patent: 4774206 (1988-09-01), Willer
Kim Sang B.
Lee Yong T.
Oh Kwang Y.
Park Ki S.
Chaudhuri Olik
Electronics and Telecommunications Research Institute
Trinh Loc Q.
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