Method for manufacturing a hybrid integrated circuit device

Details Method for manufacturing a hybrid integrated circuit device Method for manufacturing a hybrid integrated circuit device

1982-01-21

1983-11-01

Smith, John D.

Metal working

Method of mechanical manufacture

Assembling or joining

29589, 29840, 427 34, 427 96, 4271262, 4271264, 427259, 427423, H05K 334, H01L 2184

Patent

active

044123779

ABSTRACT:
A method for manufacturing a hybrid integrated circuit device comprising a step of forming an Al.sub.2 O.sub.3 layer on a metal substrate, a step of forming on the Al.sub.2 O.sub.3 layer a resist layer having a pattern opposite to that of a copper layer which will be formed on the Al.sub.2 O.sub.3 layer by a later step, a step of forming the copper layer on the Al.sub.2 O.sub.3 layer using the resist layer as a mask, a step of impregnating thermosetting material into both the Al.sub.2 O.sub.3 layer and the copper layer, and a step of providing at least one semiconductor element on the copper layer.

REFERENCES:
patent: 4031268 (1977-06-01), Fairbairn
patent: 4119480 (1978-10-01), Nishi
MacKay and Miller, "Plasma-Sprayed Dielectric Coatings for Heat Sinks in Electronic Packaging," Ceramic Bulletin, vol. 46, No. 9, pp. 833-836 (1967).
Downer, Alnst and Smyth, "Arc Plasma Sprayed Electrical Circuits and Sputtering Targets," Seventh International Metal Spraying Conference, London, pp. 199-207 (1973).
Harris and Janowiechi, "Arc-Plasma Deposits May Yield some Big Microwave Dividends," Electronics, Feb. 2, 1970, pp. 108-115.

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