Method for manufacturing a high-speed semiconductor device

Details Method for manufacturing a high-speed semiconductor device Method for manufacturing a high-speed semiconductor device

1976-06-21

1977-09-13

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21263

Patent

active

040479765

ABSTRACT:
A method for manufacturing high speed semiconductor devices by selectively reducing the minority carrier lifetime in regions susceptible to minority carrier charge storage. The selective reduction is achieved by implanting ions of low atomic weight into the surface of the semiconductor crystal in order to locally reduce the sub-surface lifetime.

REFERENCES:
patent: 3431150 (1969-03-01), Dolan, Jr. et al.
patent: 3513035 (1970-05-01), Fitzgerald et al.
patent: 3515956 (1970-06-01), Martin et al.
patent: 3824133 (1974-07-01), D'Asaro et al.
patent: 3849204 (1974-11-01), Fowler

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