Method for manufacturing a heterojunction semiconductor device b

Details Method for manufacturing a heterojunction semiconductor device b Method for manufacturing a heterojunction semiconductor device b

1979-01-05

1980-08-05

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 357 61, H01L 3118

Patent

active

042160375

ABSTRACT:
A method for manufacturing a semiconductor device comprises evaporating phosphorus on a silicon substrate to form a thin phosphorus layer and growing gallium phosphide on the substrate having the thin phosphorus layer, heterojunction being defined between the substrate and the semiconductor layer only in the region where the thin film had been formed prior to the growth of gallium phosphide.

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Saul, " . . . Transition Zone . . . GaP . . . ," Jour. Appl. Phys. 40 (1969), 3273.
Ido et al., " . . . GeSb-Ge Heterojunctions . . . ," Jap. Jour. Appl. Phys. 10, (1971), 1388.
Blum et al., "Vapor Growth of GaP onto Si . . . ," IBM-TDB, 13, (1970), 1245.
Shang, "LED with Si Substrate," IBM-TDB, 13, (1971), 2609.

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