Method for manufacturing a hetero bipolar transistor

Details Method for manufacturing a hetero bipolar transistor Method for manufacturing a hetero bipolar transistor

1990-04-27

1992-11-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437100, 148DIG148, H01L 2120

Patent

active

051622556

ABSTRACT:
A protection layer for protecting a silicon dioxide layer formed on a silicon substrate of a semiconductor device. The protection layer protects the silicon dioxide layer from being reacting with a reactant gas used in a chemical vapor deposition method performed for forming a silicon carbide layer. The silicon carbide layer is to be a wide energy band gap emitter layer of the semiconductor device. The protection layer is formed on the silicon dioxide layer, and the silicon carbide layer is formed in an active region formed on the silicon substrate in an aperture provided by etching the protection layer and the silicon dioxide layer. The protection layer is made of material which is non-reactive with the reactant gas consisting of, for example, trichlorosilane and methane. The protection layer is, for example, titanium nitride formed by a sputtering method, or nitrided silicon oxide formed by heating the silicon dioxide layer.

REFERENCES:
patent: 4623912 (1986-11-01), Chang et al.
patent: 4740483 (1988-04-01), Tobin
patent: 4980307 (1990-12-01), Ito et al.
Wolf; "Silicon processing for the VLSI era"; 1986; pp. 191-195.

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