Cleaning and liquid contact with solids – Processes – Including application of electrical radiant or wave energy...
Reexamination Certificate
2006-08-29
2006-08-29
Kornakov, M. (Department: 1746)
Cleaning and liquid contact with solids
Processes
Including application of electrical radiant or wave energy...
C134S001000, C216S062000, C216S063000, C216S066000, C216S075000, C216S076000, C216S077000, C438S906000, C438S604000, C438S606000
Reexamination Certificate
active
07096873
ABSTRACT:
A method for manufacturing a group III nitride compound semiconductor device includes irradiating a surface of a wafer with ultraviolet rays to thereby clean a resist residue from the surface of the wafer, the surface including a group III nitride compound semiconductor. The ultraviolet rays cause a reaction of oxygen molecules to form stimulated oxygen atoms having a strong oxidative power at the surface.
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Nakajo Naoki
Uemura Toshiya
Kornakov M.
McGinn IP Law Group PLLC
Toyoda Gosei Co,., Ltd.
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