Method for manufacturing a GaN based LED of a black hole...

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal

Reexamination Certificate

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C257S088000, C257S103000, C438S023000, C438S024000, C438S025000, C438S033000, C438S035000, C438S041000, C438S044000, C438S046000, C438S107000, C438S108000, C438S113000, C977S759000

Reexamination Certificate

active

11167242

ABSTRACT:
This invention relates to a method for manufacturing a GaN based LED of a back hole structure, and the method comprises: epitaxially growing an N type GaN layer, a multi-quantum wells emitting active region and a P type GaN layer in turn on an insulation substrate made of sapphire or other materials; etching the N type GaN layer by photoetching, and forming a P type ohmic contact electrode and an N type ohmic contact electrode; scribing the chip to divide the dies on the epitaxial chip into individual die; forming a SiO2insulation isolation layer on both sides of the silicon chip, forming a metal electrode on a face side, and forming a back hole pattern on a back side; forming a back hole; forming a bump pattern for plating on the face side of the silicon chip by thick resist photoetching; forming a layer of alloy with low melting point on the back side of the silicon chip, thus forming a base; on the back side of the base, directly attaching the base to a heat sink of a housing; bonding the die with the face side of the base through the metal bumps, leading an N electrode of the LED from the metal electrode formed on the face surface of the silicon chip, and leading a P electrode of the LED from the back side of the heat sink of the housing.

REFERENCES:
patent: 5998810 (1999-12-01), Hatano et al.
patent: 6597017 (2003-07-01), Seko et al.
patent: 2001/0032985 (2001-10-01), Bhat et al.

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