Method for manufacturing a GaN-based compound semiconductor ligh

Details Method for manufacturing a GaN-based compound semiconductor ligh Method for manufacturing a GaN-based compound semiconductor ligh

1997-04-16

2000-02-29

Brown, Peter Toby

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438503, 438507, 438509, 438796, 148DIG3, H01L 2100

Patent

active

060308486

ABSTRACT:
A manufacturing method for high quality GaN-based light emitting devices. The method enable effective growth of an Al.sub.y Ga.sub.1-y N (0.ltoreq.y.ltoreq.1) layer on an In.sub.x Ga.sub.1- N (0.ltoreq.x.ltoreq.1) layer by CVD. While holding or increasing the temperature after growing the InGaN layer at the temperature of T0 before growing the AlGaN at the temperature of T1 (T0.ltoreq.T1) in an atmosphere including a source of group V of elements, the present invention applies an inert gas as the carrier gas which includes a source of the group V elements. Therefore, the concentration of group V elements near the surface of the InGaN layer increases and the sublimation of the InGaN layer is prevented by increasing the steam pressure of the group V elements near the surface of the InGaN layer.

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patent: 5697826 (1997-12-01), Kim et al.
patent: 5756374 (1998-05-01), Miura et al.

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