Method for manufacturing a field plate in a trench of a...

Details Method for manufacturing a field plate in a trench of a... Method for manufacturing a field plate in a trench of a...

2009-04-21

2011-11-22

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S270000, C438S454000, C438S589000, C257SE21410, C257SE21547

Reexamination Certificate

active

08062954

ABSTRACT:
A method for manufacturing a field plate in a trench of a power transistor in a substrate of a first conductivity type is disclosed. The trench is formed in a first main surface of the substrate.

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