Method for manufacturing a field effect transistor

Details Method for manufacturing a field effect transistor Method for manufacturing a field effect transistor

1993-04-26

1994-03-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437203, 257213, H01L 21265

Patent

active

052984443

ABSTRACT:
A method for manufacturing a field effect transistor which includes one more spacer provided in the gate recess adjacent the drain sidewall than adjacent the source sidewall in the contact such that a gate metallization is displaced asymmetrically toward a source side sidewall of the recess; and method for manufacturing same wherein oblique vapor deposition of an auxiliary layer into a recess for the gate region makes it possible for a spacer therein at the source side to be removed whereas a spacer of the drain side remains in place, such that the subsequent gate metallization is positioned closer to the source than to the drain.

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