Method for manufacturing a facet extraction LED

Details Method for manufacturing a facet extraction LED Method for manufacturing a facet extraction LED

2011-08-16

2011-08-16

Dang, Phuc T (Department: 2892)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S030000, C257S094000

Reexamination Certificate

active

07998767

ABSTRACT:
A facet extraction LED improved in light extraction efficiency and a manufacturing method thereof. A substrate is provided. A light emitting part includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially stacked on the substrate. A p-electrode and an n-electrode are connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively. The p- and n-electrodes are formed on the same side of the LED. The light emitting part is structured as a ring.

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Japanese Office Action, w/ English translation thereof, issued in Japanese Patent Application No. JP 2007-033521 dated Sep. 28, 2010.
Japanese Office Action, with English translation, issued in Japanese Patent Application No. 2007-033521, mailed Feb. 22, 2011.

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