Method for manufacturing a dielectric isolation substrate

Details Method for manufacturing a dielectric isolation substrate Method for manufacturing a dielectric isolation substrate

1997-08-14

1999-08-31

Fourson, George

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438406, H01L 2176

Patent

active

059465840

ABSTRACT:
In a method for manufacturing a dielectric isolation substrate according to the present invention, during the process of pressing a semiconductor substrate (wafer), a dummy chip 103 is positioned toward the outside edge of the wafer with respect to the LSI chip 102, which is pressed into contact last, V-grooves 103A in the dummy chip 103 are formed to be deeper than V-grooves 102A in the LSI chip 102 so that voids can be effectively pushed into the dummy chip 103. Consequently, isolation of the LSI chip caused by voids can be prevented, thereby achieving an improvement in yield.

REFERENCES:
Sugawara et al., "New Dielectric Isolation for High Voltage Power ICS by Single Silicon Direct Bonding (SPSDB) Technique," Proceedings of 1992 International Symposium on Power Semiconductor Devices & ICs, Tokyo, pp. 316-321.

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