Chemistry of inorganic compounds – Silicon or compound thereof – Binary compound
Reexamination Certificate
2011-06-14
2011-06-14
Michener, Jennifer K. (Department: 1728)
Chemistry of inorganic compounds
Silicon or compound thereof
Binary compound
C423S439000, C423S446000, C264S642000, C264S643000, C264S682000, C051S307000, C051S308000, C051S293000, C051S295000, C051S296000
Reexamination Certificate
active
07959887
ABSTRACT:
A method for manufacturing a diamond composite, includes: a) mixing diamonds with additives, the mixture comprising at least 50 wt % and less than 95 wt % of diamonds and more than 5 wt % additives; b) forming a work piece from the mixture using a pressure of at least 100 Mpa; c) heating the formed work piece to at least 300° C. for removing possible water and wholly or partially removing additives; d) heating the work piece and controlling the heating temperature and heating time so that a certain desired amount of graphite is created by graphitization of diamonds, wherein the amount of graphite created by graphitization is 3-50 wt % of the amount of diamond; e) infiltrating silicon or silicon alloy into the work piece.
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Meurling Fredrik
Rostvall Tomas
Svendsen Lena
Zheng Jie
Chan Heng M
Element Six Limited
Michener Jennifer K.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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