Method for manufacturing a compound material wafer

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies

Reexamination Certificate

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C257SE21568

Reexamination Certificate

active

10984913

ABSTRACT:
The invention relates to a method for manufacturing a compound material wafer. The technique includes forming a weakened zone in a source substrate, attaching the source substrate to a handle substrate to form a source-handle assembly, and thermally annealing the source-handle assembly to further weaken the weakened zone. The method also includes holding the assembly at a holding temperature, and detaching the source substrate from the assembly at the weakened zone at the holding temperature. The holding temperature is greater than room temperature but does not promote further weakening of the weakened zone.

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Michel Bruel, ,, XP-002294551, “Separation of Silicon Wafers by the Smart-Cut Method”, Springer-Verlag, Mat Res Innovat, vol. 3, pp. 9-13. (1999).

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