Method for manufacturing a component with porous silicon

Details Method for manufacturing a component with porous silicon Method for manufacturing a component with porous silicon

1993-09-17

1994-11-01

Fourson, George

Fishing, trapping, and vermin destroying

437 31, 437905, H01L 21283, H01L 21265

Patent

active

053607597

ABSTRACT:
For manufacturing a component with porous silicon, two highly doped regions with a lightly doped region arranged between them are formed in a silicon wafer. The dopant concentrations are thereby set such that porous silicon arises in the lightly doped region in a subsequent anodic etching. Light-emitting diodes or light-controlled bipolar transistors can be manufactured in this way.

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