Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2006-10-03
2006-10-03
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S200000
Reexamination Certificate
active
07115438
ABSTRACT:
A method for manufacturing a complementary metal-oxide semiconductor sensor is provided. The present method provides a semiconductor structure including a plurality of conductors thereon. An inter-metal dielectric layer is formed on the conductors. A silicon nitride film is applied on the inter-metal dielectric layer. An oxide layer is formed on the silicon nitride film. The oxide layer, the silicon nitride film and the inter-metal dielectric are etched to expose portions of the conductors. The oxide layer and the exposed conductors are cleaned in a cleaning step later.
REFERENCES:
patent: 6472243 (2002-10-01), Gogoi et al.
patent: 6838298 (2005-01-01), Lee
patent: 2004/0129990 (2004-07-01), Lee
Chang Chih-Sheng
Jiang Nien-Chung
Lin Chi-Rong
Chaudhari Chandra
Nath & Associates PLLC
Novick Harold L.
United Microelectronics Corp.
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