Method for manufacturing a chalcopyrite solar cell

Fishing – trapping – and vermin destroying

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437 3, 136265, H01L 3118, H01L 3100

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051378353

ABSTRACT:
A method for producing a solar cell having a semiconductor layer of copper gallium diselenide covered with a window layer of copper aluminum diselenide by first producing a semiconductor material of one type of conductivity by forming either a copper gallium diselenide or a copper aluminum diselenide and then exchanging metal ions in the upper portion of the layer to provide an opposite type of conductivity by exchanging metal ions of the layer for another type. The exchange can include exchanging both the copper and gallium ions with the zinc ion to form a zinc diselenide window or replacing the gallium ions with aluminum ions to form a copper aluminum diselenide window or, if a copper aluminum diselenide layer had been provided, forming an absorbing layer by replacing the aluminum ions with the gallium ions to form the absorbing layer.

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patent: 4536260 (1985-08-01), Cocivera
patent: 4642140 (1987-02-01), Noufi et al.
patent: 5078804 (1992-01-01), Chen et al.
K. Mitchell et al., "Single and Tandem Junction CuInSe.sub.2 cell and Module Technology", IEEE, 1988, pp. 1384-1389.

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