Etching a substrate: processes – Forming or treating an article whose final configuration has...
Reexamination Certificate
2005-06-28
2005-06-28
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Forming or treating an article whose final configuration has...
C216S024000, C216S039000, C216S041000, C438S020000
Reexamination Certificate
active
06911154
ABSTRACT:
A method for manufacturing a structure, including the steps of forming on the substrate a piling of a first insulating layer, a first metallization level, a second insulating layer, and a second metallization level, opening in the second metallization level and in the second insulating layer first windows corresponding to the contour of the first openings and second windows, the external contour of which corresponds to the internal contour of the second openings, forming in a masking layer third windows larger than the first windows, etching the first metallization level in the first windows, removing the second metallization level under the masking layer to as far as the internal periphery of the second windows, etching by a chosen distance the first insulating layer, and simultaneously removing the second insulating layer within the contour of the second windows, and removing the masking layer.
REFERENCES:
patent: 3998678 (1976-12-01), Fukase et al.
patent: 6165374 (2000-12-01), Cathey et al.
patent: 0 930 634 (1999-07-01), None
patent: 2 779 271 (1999-12-01), None
Ahmed Shamim
Commissariat a l''Energie Atomique
Duane Morris LLP
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