Method for manufacturing a capacitor using non-conformal dielect

Details Method for manufacturing a capacitor using non-conformal dielect Method for manufacturing a capacitor using non-conformal dielect

1996-12-09

1998-06-23

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438254, 438253, 438397, H01L 2120

Patent

active

057705100

ABSTRACT:
A method of forming a capacitor on a semiconductor substrate includes forming a first oxide layer on the semiconductor substrate. A contact hole is then formed in the first oxide layer. A first conductive layer is formed on the first oxide layer and in the contact hole. Then the first conductive layer is etched to form a node structure. A non-conformal oxide is formed on the node structure so that the non-conformal oxide has an overhang portion and a lower portion on the sidewall of the node structure. The non-conformal oxide is isotropically etched to remove the lower portion of the non-conformal oxide and to expose the lower sidewall of the node structure. A second conductive layer is conformally deposited on the non-conformal oxide layer and the lower sidewall of the node structure. The second conductive layer is anisotropically etched, using the overhang portion of the non-conformal oxide as a mask. Then the non-conformal oxide is removed by using a highly selective etching process. The resulting conductive structure serves as a bottom storage node of the capacitor. A dielectric film is formed on the first conductive layer and the second conductive layer. A third conductive layer is formed over the dielectric film to form the top storage node of the capacitor.

REFERENCES:
patent: 5104821 (1992-04-01), Choi et al.
patent: 5223083 (1993-06-01), Cathey et al.
patent: 5460996 (1995-10-01), Ryou
patent: 5468671 (1995-11-01), Ryou
patent: 5488011 (1996-01-01), Figura et al.
patent: 5492850 (1996-02-01), Ryou
patent: 5663093 (1997-09-01), Tseng et al.

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