Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Patent
1997-06-19
1999-03-09
Chang, Joni
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
438240, H01L 218242
Patent
active
058799575
ABSTRACT:
A capacitor of a semiconductor device and a method for manufacturing the same are disclosed for preventing generation of leakage current, simplifying the manufacturing process, and improving electric characteristics of the device. The capacitor includes a substrate, an insulating layer having a contact hole therein, a plug formed in the contact hole, a first conductive layer formed on the plug, a conductive oxide layer formed on the first conductive layer, a second conductive layer formed on the conductive oxide layer as part of a lower electrode, a dielectric layer formed on the entire surface inclusive of the lower electrode, and an upper electrode formed on the dielectric layer.
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The Superiority of Ru Electrodes for Gigabit DRAMs, N. Mikami et al, ISIF, 1996.
An ECR MOCVD (Ba,Sr)TiO3 based stacked capacitor technology with Ru02/Ru/TiN/TiSix storage nodes for Gbit-scale DRAM, S. Yamamichi, et al., 1995 IEEE IEDM 95-119, pp. 5.3.1-5.3.4.
Chang Joni
LG Semicon Co. Ltd.
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