Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1998-10-14
2000-04-04
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438254, H01L 2120
Patent
active
06046092&
ABSTRACT:
A method for manufacturing a capacitor, applied to a memory unit including a substrate forming thereon a dielectric layer forming thereon a first conducting layer, includes the steps of a) forming a first sacrificial layer over the first conducting layer, b) partially removing the first sacrificial layer, the first conducting layer, and the dielectric layer to form a contact window, c) forming a second conducting layer over the first sacrificial layer and in the contact window, d) forming a second sacrificial layer over the second conducting layer, e) partially removing the second sacrificial layer, the second conducting layer, and the first sacrificial layer to expose a portion of the first sacrificial layer, f) forming a third conducting layer alongside the second sacrificial layer, the second conducting layer, and the portion of the first sacrificial layer, g) removing the first and second sacrificial layers to expose the first conducting layer, and h) partially removing the first conducting layer while retaining a portion of the first conducting layer under the second and third conducting layers to construct a capacitor plate with a generally cross-sectionally modified H-shaped structure. This structure can effectively increase the surface area of the capacitor.
REFERENCES:
patent: 5444010 (1995-08-01), Park et al.
patent: 5468670 (1995-11-01), Ryou
patent: 5550080 (1996-08-01), Kim
patent: 5721681 (1998-02-01), Wu
patent: 5851897 (1998-12-01), Wu
MacPherson Alan H.
Mosel Vitelic Inc.
Nguyen Tuan H.
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