Method for manufacturing a calibration wafer having a microdefec

Details Method for manufacturing a calibration wafer having a microdefec Method for manufacturing a calibration wafer having a microdefec

1995-01-31

1997-03-18

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step acting on the...

437 8, 437 10, 437 12, C30B 2906

Patent

active

056118554

ABSTRACT:
A semiconductor silicon wafer (10) useful as a calibration standard for measurement of a thickness (18) of a microdefect-free layer (16) is formed by depositing an epitaxial layer onto a substrate (12) having an interstitial oxygen concentration suitable for precipitating oxide. Large, uniform oxide microdefects (14) are formed in the substrate by maintaining the semiconductor silicon wafer at between 600.degree. C. and 900.degree. C. to nucleate oxide precipitates that are then grown at between 800.degree. C. and 1,200.degree. C. Because the epitaxial layer contains no oxide precipitate nuclei to form microdefects, the epitaxial layer remains a microdefect-free layer and has a relatively sharp, easily detectable boundary with the substrate. The epitaxial layer can be polished to a reduced thickness, if desired.

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