Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Forming base region of specified dopant concentration profile
Reexamination Certificate
2005-05-03
2005-05-03
Dang, Trung (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Forming base region of specified dopant concentration profile
C438S365000, C438S366000, C438S374000, C257SE29030, C257SE29184
Reexamination Certificate
active
06887765
ABSTRACT:
According to one embodiment of the invention, a method used in manufacturing an intermediate structure in a bipolar junction transistor includes implanting a base dopant in a semiconductor substrate to form a base, forming a dielectric layer outwardly from the semiconductor substrate, etching a portion of the dielectric layer to form an emitter region, forming an emitter polysilicon layer on the semiconductor substrate, and after forming the emitter polysilicon layer, annealing the semiconductor substrate.
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Howard Gregory E.
Pinto Angelo
Brady III W. James
Dang Trung
McLarty Peter K.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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