Fishing – trapping – and vermin destroying
Patent
1990-07-25
1992-06-02
Quach, T. N.
Fishing, trapping, and vermin destroying
437 34, 437 58, 437162, 148DIG144, H01L 21331, H01L 21336, H01L 21225
Patent
active
051186330
ABSTRACT:
Sources and drains of MOS transistors are formed after the formation of an emitter of a bipolar transistor, whereby the sources and drains are made smaller in thickness than the emitter. Since the sources and drains are not subjected to a high-temperature heat treatment conducted in the formation of the emitter, there is no fear of increase in thickness of the sources and drains caused by the diffusion of impurities. There can be formed a BiCMOS having a high integration density and superior characteristics.
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Itoh Kiyoo
Kawajiri Yoshiki
Kawamoto Yoshifumi
Kitsukawa Goro
Sagara Kazuhiko
Hitachi , Ltd.
Quach T. N.
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