Fishing – trapping – and vermin destroying
Patent
1991-10-21
1992-09-22
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 33, 437 59, 437 69, 437 71, 357 43, H01L 2170, H01L 21265
Patent
active
051496631
ABSTRACT:
There is provided a method of manufacturing Bi-CMOS semiconductor devices in which further comprises the steps of; depositing a polysilicon layer, an oxide film and a nitride film one and another in order to form the emitter and collector of a bipolar transistor, and the gates of a CMOS; forming an oxide film and a nitride film at the side wall of the polysilicon layer one and another; etching the exposed portions of an epitaxial layer and depositing other nitride film on the nitride film at the side wall; growing an oxide film on the etched portions of the epitaxial layer and removing all the nitride films; and implanting impurities on portions of the epitaxial layer exposed by the etched nitride films in order to make the inactive base region of the bipolar transistor and the source/drain regions of a PMOS transistor P+ type, and to make the source/drain regions of a NMOS transistor n+ type. Accordingly, the widths of the regions can be decreased and thus junction capacitance can be reduced in accordance with the magnitude of the decreased width.
REFERENCES:
patent: 4816423 (1989-03-01), Havemann
patent: 5059546 (1991-10-01), Havemann
Chai Sang H.
Kim Kwang S.
Koo Yong S.
Nam Kee S.
Chaudhuri Olik
Korean Electronics and Telecommunications
Pham Long
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